Perot / H. S. P. / Nanoscale Systems / Communication Electronics / S. Metal / ABB Group Ltd. / Philips / T. I. Device Electronics / Thin Solid Films / Intel / /
Country
United States / /
Facility
Stanford University / Cornell University / Purdue University / Cornell Nanofabrication Facility / /
IndustryTerm
carrier mobilities / metal-tube junctions / gain devices / silicon devices / high carrier mobility6 / aqueous electrolyte solution / metal contacts / carrier injection / logic applications / nm generation logic technology / aqueous electrolyte solutions / electromechanical systems / extracted carrier mobility / n-type devices / Field-modulated carrier transport / imaging / carrier mobility / metal work function / metal / metal source / miniature fieldeffect devices / carrier mobility reach / square law model21 / High carrier mobilities / as-made back-gated devices / silicon electronics / electronic devices / metal oxide semiconductor / electronics / gated-tube devices / molecular electronics / earlier devices / carrier depletion / apparent carrier mobility / /
Organization
California 94305 / USA Department of Physics / National Science Foundation / Center for Nanoscale Systems / Purdue University / Cornell University / Department of Chemistry / Lucille Packard Foundation / MARCO Focused Research Center on Materials / Structures and Devices / Alfred Sloan Foundation / Stanford University / School of Electrical and Computer Engineering / /
ARTICLES High-κ dielectrics for advanced carbonnanotube transistors and logic gates ALI JAVEY1, HYOUNGSUB KIM2, MARKUS BRINK3, QIAN WANG1, ANT URAL1, JING GUO4, PAUL MCINTYRE2, PAUL MCEUEN3, MARK LUNDSTROM4 AND HONGJIE