H. S. P. / Getty S. A. / High Frequency Electronics / /
Country
United States / / /
Facility
Joint KACST/California Center of Excellence / University of Southern California / /
IndustryTerm
radio frequency applications / gate metal / chemical vapor deposition / particular device / nanotube device / mixer applications / highfrequency applications / separated nanotube networks / nd applications / nanotube-based circuit applications / room-temperature processing procedure / analog electronics / order mixing products / electronics / nanotube solution / nanotube networks / /
Movie
Conflict of Interest / /
MusicGroup
Frequency / Structure / Operation / Carbon / /
NaturalFeature
vs channel / /
Organization
Pyojae Kim / and Chongwu Zhou* Department of Electrical Engineering / UCLA / University of Southern California / Los Angeles / American Chemical Society / Joint KACST/California Center of Excellence / /
Person
Yung-Chen Lin / Hossein Hashemi / Alireza Imani / Kang L. Wang / Kosmas Galatsis / Yuchi Che / Juan Alzate / Chongwu Zhou / Sergiy Cherepov / Hani Enaya / Pyojae Kim / /
Position
Farmer / Professor / Cao / /
ProgrammingLanguage
DC / /
ProvinceOrState
Alabama / Maryland / Southern California / South Dakota / California / /
RadioStation
Radio Frequency Transistors / /
Region
Southern California / /
Technology
T-gate technology / photolithography / Integrated Circuits / chemical vapor deposition / dielectric / Radio Frequency / CVD / /
ARTICLE T‑Gate Aligned Nanotube Radio Frequency Transistors and Circuits with Superior Performance Yuchi Che, Yung-Chen Lin, Pyojae Kim, and Chongwu Zhou*