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ISSCCSESSION 30 / EMERGING MEMORIESA 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-Termination
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Document Date: 2018-05-16 15:46:39
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File Size: 1,08 MB
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ISSCCSESSION 30 / EMERGING MEMORIESA 1Mb 28nm STT-MRAM with 2.8ns Read Access Time at 1.2V VDD Using Single-Cap Offset-Cancelled Sense Amplifier and In-situ Self-Write-Termination