Improved Oxide Growth Rate and Uniformity through New Steam Delivery Method

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Date: 2008-01-26 11:30:52 Silicon Thermal oxidation Ceramic materials Oxygen Solar cells Deal–Grove model Oxide Silicon dioxide Ultra-high-purity steam for oxidation and annealing Chemistry Matter Semiconductor device fabrication		Improved Oxide Growth Rate and Uniformity through New Steam Delivery Method Add to Reading List Source URL: www.rasirc.com Download Document from Source Website File Size: 305,60 KB Share Document on Facebook

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