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Quantum mechanics / Electricity / Mathematical physics / Depletion region / Threshold voltage / MOSFET / Schrödinger equation / Debye length / Electronic band structure / Physics / Electromagnetism / Algebra


MOSFET Analytical Inversion Charge Model with Quantum Effects using a Triangular Potential Well Approximation H. Abebe*, E. Cumberbatch**, V. Tyree* and H. Morris*** * University of Southern California, Information Scie
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Document Date: 2006-06-15 18:36:51


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City

San Francisco / Claremont / Marina del Rey / /

Company

Solid State Electronics / /

Country

United States / /

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Facility

Claremont Graduate University / University of Southern California / Information Sciences Institute / San Jose State University / /

IndustryTerm

energy eigenvalue / carrier concentration / electron potential energy / ground state energy value / asymptotic solution / analytical solutions / metal oxide semiconductor field effect transistor modeling / semiconductor energy band gap widening / asymptotic solutions / electron ground state energy calculation / numerical solutions / energy / /

OperatingSystem

Fermi / /

Organization

Information Sciences Institute / University of Southern California / Department of Mathematics / School of Mathematical Sciences / San Jose State University San Jose / MOSIS Service / Claremont Graduate University / /

Person

J. Van Dort / D. Cohen / M. Ward / F. Odeh / /

ProvinceOrState

Southern California / California / /

PublishedMedium

Physical Review / /

Region

Southern California / /

Technology

semiconductor / simulation / /

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