IBM / Semiconductor Research Corporation / Cambridge University Press / C 2013 AIP Publishing LLC / CRC Press / AIP Publishing LLC / P. Meuris / /
Country
United States / China / /
Currency
pence / USD / / /
Facility
University of Illinois / The University / The University of Hong Kong / University Grant Council / /
IndustryTerm
energy levels / simulation tools / electronic device / scaled devices / realistic electronic devices / chemical potential / n-type devices / energy / retarded self-energy / energy balance / nano-devices / nano-electronic systems / electronic devices / nano-scale devices / numerical algorithms / energy level broadening / self-energy function / technology fabrication / electrical systems / technology computer-aided-design / /
OperatingSystem
Fermi / LDOS / /
Organization
Cambridge University / University of Illinois / Urbana-Champaign / National Science Foundation / Hong Kong Department of Electrical and Electronic Engineering / Department of Chemistry / Hong Kong University Grant Council / Department of Electrical and Computer Engineering / Hong Kong Research Grant Council / University of Hong Kong / /
Person
Jie Peng / Quan Chen / Nat / Jun Z. Huang / Stanislav Markov / Yam / /
A multi-scale modeling of junctionless field-effect transistors ChiYung Yam, Jie Peng, Quan Chen, Stanislav Markov, Jun Z. Huang et al. Citation: Appl. Phys. Lett. 103, [removed]); doi: [removed] View online: