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Semiconductor devices / MOSFET / Electronic design / Integrated circuits / Semiconductors / Gallium nitride / Self-aligned gate / Transistor / CMOS / Electronic engineering / Electronics / Electrical engineering


University of Warwick institutional repository: http://go.warwick.ac.uk/wrap This paper is made available online in accordance with publisher policies. Please scroll down to view the document itself. Please refer to the
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Document Date: 2010-11-19 07:46:35


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Manchester / Houston / Austin / Long Beach / /

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Cox / IEEE Authorized / Authorized / Intel / Agilent / /

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United Kingdom / /

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WARWICK UNIVERSITY / University of Warwick / /

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metal / mobile and digital signal processing applications / semiconductor devices / elegant solution / thin-oxide devices / present devices / metal source/drain transistors / drain devices / carrier mobility / /

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U.K. / /

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Semiconductor Industry Association / WARWICK UNIVERSITY / University of Warwick / Department of Physics / /

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A. Wang / P. Raskin / T. M. Chung / V / T. E. Whall / J. M. Larson / N. Breil / F. Danneville / G. Larrieu / G. Dambrine / /

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Author / Editor / d.j. / D. J. / /

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California / /

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semiconductor / metal S/D Schottkybarrier MOSFET technology / DSD / semiconductor devices / microwave / field-effect transistor / simulation / Digital Object Identifier / SB-MOS technology / 65 nm CMOS technology / /

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