Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi

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Date: 2016-08-08 18:15:09 Oxides Semiconductor device fabrication Thin film deposition Surface science Desorption Gallium(III) oxide Suboxide Ultra-high vacuum Epitaxy		Comparison of the growth kinetics of In2O3 and Ga2O3 and their suboxide desorption during plasma-assisted molecular beam epitaxy Patrick Vogt and Oliver Bierwagen Citation: Applied Physics Letters 109, ); doi Add to Reading List Source URL: www.pdi-berlin.de Download Document from Source Website File Size: 891,30 KB Share Document on Facebook

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