Strasbourg / Preston / Kano / Osaka / Boston / Buczkowski / Valbonne Sophia Antipolis / Oxford / L. A. / /
Company
Y. W. He N. A. / Solid State Electronics / V. Melnik A. E. / Sony / S. Hooper L.C. / E.Bedel-Pereira Solid State Electronics / M. Stutzmann Solid-State Electronics / T. J. Foster L. C. / T. S. Cheng L.C. / S. I. Stepanov A. E. / P. Fini S. P. / May A. S. / Lackliso L. C. / P. Rice-Evans A. S. / S. Guha N. A. / K.H.Kim N.A. / J. A. Edmond Solid-State Electronics / I. P. Nikitina A. E. / /
Country
France / Japan / United States / United Kingdom / /
Event
Product Issues / /
Facility
D Weir / /
IndustryTerm
chemical beam epitaxy / Reflection high-energy electron diffraction intensity oscillations / gas source molecular beam epitaxy / blue light emitting devices / gas plasma / metal / Chemical beam / Gas-source molecular beam / chemical composition / low-energy electron microscopy / gas-source molecular beam epitaxy / heterojunction devices / gas-source molecularbeam epitaxy / /
Person
Dirk Uffmann / Koichi Ishida / Akira Ishibashi / B. Rossi / Z. Yu / D. Olego / S.Kurtz / W. C. Hughes / P. Lima C. R. Miskys / A. Wenzel B. Rauschenbach / Vadim Lebedev / J. Petruzzello / R. L. Fernandez / Igor N. Goncharuk / E. Bauer / V / D. B. Eason / Marina V. Baidakova / K. Lischka / J. W. Cook / Jr / Christian Heinlein / Hajime Sasamoto / D. Schikora / Hiroyuki Okuyama / Takashi Koboyashi / J. Gaines / S. T. Tsong / V / Bernd Schröter / J. M. Gaines / C. Boney / Masashi Mori / D.J.Friedman / N. J. Jeffs / Shigetaka Tomiya / R. L. Gunshor / C. Ponzoni / M. Stutzmann / Henning Riechert / W.I. Wang / L. He / Tomoyuki Miyamoto / Atsushi Shigemori / Jens Stemmer / Sophia Antipolis / J. Crystal Growth / F. Cerdeira / Robert Averbeck / Junichi Shike / J. Aderhold / V / Takeo Kageyama / Thomas Rotter / A.J.Ptak / Fumio Koyama / S.W.Johnston / Young K. Park / Jochen Aderhold / R. Dimitrov / V / C. Ponzoni-Wakeman / Alexander N. Smirnov / J. F. Schetzina / Y. Saito T. Yamaguchi / O. Ambacher / J. Cabalu / S. V. Novikov / V / Yong Tae Kim / J. J. Nürnberger / V / Hoon Choi / W.H. Rowland / Jr. / P. van der Sluis / Arsen V. Subashiev / W.K.Metzger / Davis S. V. Novikov / Je Won Kim / T. Marshall / Kanji Takeuchi / E. A. Meneses / Jostein K. Grepstad / Kenichi Iga / Yumi Sanaka / Akihiko Kikuchi / Katsumi Kishino / Ryuhei Kimura / J. Han / V. Tret'yakov Jounranl / Olga Semchinova / Masaki Yoshizawa / Shigeki Makino / Masry J. W. Cook / Jr / D. J. As / J. Petruzello / Shizuo Fujita / W. H. Rowland / Jr / Kouichi Kushi / Nobuhiko Fujita / Kiyoshi Takahashi / Crystal Growth / Satoru Kijima / A. L. Johnson / M. D. Pashley / /
Publications that quote the use of OAR atom sources Nitrides (AlN, GaN, InN) 1. Evaluation of a new plasma source for molecular beam epitaxial growth of InN and GaN films. W Hoke P Lemonias & D Weir. J Crystal Growth 111