Good morning everyone, I am Edgar Martinez, Program Manager for the Microsystems Technology Office. Today, it is my pleasure to dedicate the next few minutes talking to you about transformations in future military system

First Page		Document Content
Date: 2000-10-16 12:09:40 Semiconductor devices Optoelectronics Wide bandgap semiconductors Gallium nitride Gallium arsenide Light-emitting diode Indium phosphide Diode Monolithic microwave integrated circuit Chemistry Compound semiconductors Inorganic compounds		Good morning everyone, I am Edgar Martinez, Program Manager for the Microsystems Technology Office. Today, it is my pleasure to dedicate the next few minutes talking to you about transformations in future military system Add to Reading List Source URL: archive.darpa.mil Download Document from Source Website File Size: 12,40 KB Share Document on Facebook

	5.1.3 Doping of Compound Semiconductors Some Basic Considerations Essentially, the semiconducting properties of Silicon stem from the sp3 hybrid bonds formed between electrically neutral atoms. Two Si atoms donate one e DocID: 1fk3t - View Document
	Exciton Recombination Mechanisms in General In chapterseveral questions concerning exciton recombination mechanisms were asked: Why GaP? How about other III-V compound semiconductors? How about more exotic semicon DocID: 1dVzb - View Document
	GaN Manifesto John Croteau President and CEO The Path to Mainstream GaN Commercialization DocID: 1aUWZ - View Document
	LED DOT MATRIX BL-M23A881XXX Features: Ø 60.20mm (2.3”) F 5.0 dot matrix LED display, RGB COLOR DocID: 1arAb - View Document
	EWM O VPEJUNE, 2015 LUND, SWEDEN 16th European Workshop on Metalorganic Vapour Phase Epitaxy DocID: 1ac5p - View Document