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Carbides / Semiconductor device fabrication / Power electronics / Ceramic materials / Silicon carbide / Gallium nitride / Power semiconductor device / Wide bandgap semiconductors / Semiconductor device / Chemistry / Matter / Semiconductor devices


Trim Size: 170mm x 244mm Kimoto c01.tex V2[removed]:53 A.M. 1 Progress in Electronics
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Document Date: 2014-10-08 07:18:10


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City

Si / Chiba / Pasadena / Bristol / New York / Tokyo / Weinheim / Ghandhi / /

Company

University of South Carolina Press / Temperature Semiconductor / AL Introduction CO / Power Transmission Automobile Electronics / Cambridge University Press / Pergamon Press / Naval Research Laboratory / Wiley-VCH Verlag GmbH / Ge / Taylor & Francis Group / Rohm / Control Home Appliance SW Power Supply AC Telecom / John Wiley & Sons Inc. / World Scientific / A. (eds) (2010) Flexible Electronics / Diodes / John Wiley & Sons Singapore / Compound Semiconductors / H.L. (2011) High Temperature Electronics / Power Electronics / Related Semiconductors / International Energy Agency / /

Country

Japan / /

Facility

Ioffe Physical Technical Institute / Carnegie Mellon University / Kyoto University / University of Pittsburgh / Naval Research Laboratory / State University of New York / University of Erlangen-Nürnberg / Linköping University / Purdue University / CVD reactor / /

IndustryTerm

by-product / silicon carbide electronics / surface devices / enormous energy saving / semiconductor devices / semiconductor device technologies / device technology / frequency devices / main target applications / technology development / frequency applications / ultrahigh-voltage switching devices / chemical vapor deposition / planar double-implanted metal-oxide-semiconductor field effect transistor / physical and chemical properties / chemical inertness / green light-emitting devices / voltage bipolar device applications / lateral switching devices / energy consumption / homoepitaxial growth technology / electrical and electronic systems / planar technology / simulation technology / typical applications / chemical properties / metal-oxide-semiconductor field effect transistors / electronic applications / telecommunications / device-fabrication technologies / long carrier lifetime / device technologies / electronic devices / electronics / energy efficiency / physical and chemical stability / device processing technologies / chemical bonding / electrical energy consumption / light-emitting devices / state electronics / /

Organization

Cambridge University / Linköping University / University of South Carolina / Ioffe Physical Technical Institute / Purdue University / State University of New York / University of Pittsburgh / Kyoto University / Carnegie Mellon University / University of Erlangen-Nürnberg / /

Person

J.W. Palmour / V / Davis / C.H. Carter / Jr. / L.A. Lipkin / Neudeck / Larkin / Addison Wesley / James A. Cooper / Tsunenobu Kimoto / V.F. Tsvetkov / Bell Syst / /

Position

General / D.J. / Hunter / Marshall / /

ProvinceOrState

S.K. / New York / California / /

Technology

semiconductor / alpha / radiation / sublimation / device-fabrication technologies / II-VI ZnSe-based semiconductor device technologies / device processing technologies / polycrystalline SiC technology / semiconductor devices / Si LSI technology / Process Technology / integrated circuits / device technologies / SiC technology / chemical vapor deposition / semiconductors / Lasers / simulation technology / GaN technology / optoelectronics / device technology / homoepitaxial growth technology / SiC technologies / CVD / /

URL

http /

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