First Page | Document Content | |
---|---|---|
Date: 2006-06-15 12:02:18 | Study of vacancy-type defects after post-growth annealing of undoped GaAs V. Bondarenko, K.Petters and R. Krause-Rehberg Introduction • SI GaAs one of the most common materials for semiconductor devicesAdd to Reading ListSource URL: positron.physik.uni-halle.deDownload Document from Source WebsiteFile Size: 154,67 KBShare Document on Facebook |