Back to Results
First PageMeta Content
Crystallography / Dislocation / Metallurgy / Jog / Stress field / Grain boundary / Creep / Burgers vector / Materials science / Chemistry / Crystallographic defects


PHYSICAL REVIEW B 86, [removed]Finding activation pathway of coupled displacive-diffusional defect processes in atomistics: Dislocation climb in fcc copper Sanket Sarkar,1 Ju Li,2,* William T. Cox,1 Erik Bitzek,3 T
Add to Reading List

Document Date: 2012-07-30 11:07:58

Open Document

File Size: 1,16 MB

Share Result on Facebook

City

Cambridge / Erlangen / Wilsdorf / London / Malabar / /

Company

Krieger Publishing Company / Balluf / Thomson / CRC Press / COX / /

Country

Germany / United States / Singapore / /

/

Facility

The Ohio State University / Massachusetts Institute of Technology / /

IndustryTerm

energy minimization / chemical equilibrium / free energy / machinery / chemical potential / chemical free energy model / exchange chemical potential / energy / chemical and kinetic extension / minimum energy pathway / constant chemical potential / energy landscape / power-law creep / activation energy corresponding / free energy surface / chemical / activation energy barrier / chemical potential differences / activation energy / chemical diffusivity / isotropic elasticity solution / /

MarketIndex

set 014115 / /

Organization

National Science Foundation / Department of Materials Science and Engineering / The Ohio State University / Columbus / Massachusetts Institute of Technology / Federal Communications Commission / USA Department of Nuclear Science and Engineering / /

Person

J. Van Vliet / J. Li / C. Shen / Rodney / William T. Coxa / T. T. Lau / Sanket Sarkara / Erik Bitzekc / K. Van Vliet / Sanket Sarkar / Thomas J. Lenoskyb / Y. Wang / X. Lin / S. Yip / Martin / Ju Lib / /

ProvinceOrState

Alberta / Ohio / Maryland / Florida / Massachusetts / /

RadioStation

WANG / /

Technology

Radiation / thermodynamics / DMD algorithm / simulation / /

URL

http /

SocialTag