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86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices
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Document Date: 2015-01-23 09:10:57
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86 Technology focus: GaN HEMTs First application of low-cost deposition of titanium dioxide for GaN MOS-HEMT Ultrasonic spray pyrolysis deposition has been used to create devices