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Predicting material parameters for intrinsic point defect diffusion in Silicon Crystal Growth Michael Griebel1, Lukas Jager2 and Axel Voigt3 1 Institut für Angewandte Mathematik, Universität Bonn, Wegelerstr. 6, 53115
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Document Date: 2015-03-23 14:22:06
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File Size: 543,76 KB
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