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Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2008S2-003 Effects of thermal annealing on charge density and N chemical states in HfSiON films studied by photoemission spectroscopy
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Document Date: 2010-01-05 10:36:05


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City

Tokyo / /

Country

Japan / /

Currency

pence / /

/

Facility

The University of Tokyo / Photon Factory / /

IndustryTerm

energy positions / lower binding energy indicating / oxygen gas pressure dependence / metalorganic chemical vapor deposition / chemical states / oxygen gas partial pressures / oxygen gas pressures / energy / /

Organization

University of Tokyo / Tokyo / Synchrotron Radiation Research Organization / Department of Applied Chemistry / /

Technology

spectroscopy / Radiation / x-ray / dielectric / chemical vapor deposition / /

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