APPLIED PHYSICS LETTERS 87, 091910 共2005兲 Interaction of nitrogen with vacancy defects in N -implanted ZnO studied using a slow positron beam Z. Q. Chen,a兲 M. Maekawa, and A. Kawasuso Advanced Science Research Cen - Advanced Materials - Document - PDFSEARCH.IO

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Date: 2005-08-29 02:19:59 Ion implantation Materials science Annealing Chemical elements Zinc oxide Nitrogen Chemistry Semiconductor device fabrication Ceramic materials		APPLIED PHYSICS LETTERS 87, 091910 共2005兲 Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam Z. Q. Chen,a兲 M. Maekawa, and A. Kawasuso Advanced Science Research Cen Add to Reading List Source URL: www.geocities.jp Download Document from Source Website File Size: 83,37 KB Share Document on Facebook

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