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Ion implantation / Materials science / Annealing / Chemical elements / Zinc oxide / Nitrogen / Chemistry / Semiconductor device fabrication / Ceramic materials


APPLIED PHYSICS LETTERS 87, 091910 共2005兲 Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam Z. Q. Chen,a兲 M. Maekawa, and A. Kawasuso Advanced Science Research Cen
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Document Date: 2005-08-29 02:19:59


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City

Berlin / /

Country

Japan / /

Currency

USD / /

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Facility

Japan Atomic Energy Research Institute / American Institute of Physics Downloaded / American Institute of Physics / T. Ohdaira National Institute of Advanced Industrial Science / A. Kawasuso Advanced Science Research Center / /

IndustryTerm

energy range / incident positron energy / carrier mobility / /

Organization

Japan Atomic Energy Research Institute / American Institute of Physics / Japan R. Suzuki and T. Ohdaira National Institute of Advanced Industrial Science and Technology / A. Kawasuso Advanced Science Research Center / /

Person

F. Tuomisto / V / /

PublishedMedium

APPLIED PHYSICS LETTERS / /

Technology

semiconductor / spectroscopy / radiation / semiconductors / /

URL

http /

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