TECHNICAL REPORTS Low On-Resistance SiC-MOSFET with a 3.3-kV Blocking Voltage Authors: Kenji Hamada*, Shiro Hino* and Takeshi Kitani**

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Date: 2015-03-22 21:29:16 Electronic engineering Semiconductor devices JFET MOSFET Field-effect transistor Power semiconductor device Transistor Threshold voltage Insulated gate bipolar transistor Electrical engineering Technology Power electronics		TECHNICAL REPORTS Low On-Resistance SiC-MOSFET with a 3.3-kV Blocking Voltage Authors: Kenji Hamada, Shiro Hino and Takeshi Kitani** Add to Reading List Source URL: www.mitsubishielectric.com Download Document from Source Website File Size: 385,77 KB Share Document on Facebook

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