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Electronic engineering / Semiconductor devices / JFET / MOSFET / Field-effect transistor / Power semiconductor device / Transistor / Threshold voltage / Insulated gate bipolar transistor / Electrical engineering / Technology / Power electronics


TECHNICAL REPORTS Low On-Resistance SiC-MOSFET with a 3.3-kV Blocking Voltage Authors: Kenji Hamada*, Shiro Hino* and Takeshi Kitani**
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Document Date: 2015-03-22 21:29:16

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File Size: 385,77 KB

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Company

Related Wide Bandgap Semiconductors / Diodes / Mitsubishi Electric / /

Facility

Institute of Electrical Engineers / /

IndustryTerm

voltage power devices / low on-resistance technology / railway inverter systems / inverter applications / power devices / unipolar devices / metal oxide semiconductor field effect transistor / /

Organization

TECHNICAL REPORTS Technology Development Organization Ministry of Economy / Trade and Industry / *Advanced Technology R&D Center / Low Carbon-Emission Society / Institute of Electrical Engineers of Japan / /

Person

Kenji Hamada / Takeshi Kitani / /

Product

SiC-SBDs / SiC / Si / /

ProgrammingLanguage

DC / /

Technology

semiconductor / simulation / application technologies / low on-resistance technology / /

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