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Charge carriers / Semiconductors / Condensed matter physics / Optoelectronics / Semiconductor devices / Hot carrier injection / MODFET / Transistor / Noise / Electromagnetism / Physics / Electronics


j831 Index 1 dB compression point[removed]f current noise[removed]f noise 531, 729, 731
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Document Date: 2009-04-21 02:17:14


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City

Weinheim / /

Company

Perot / Nitride Semiconductors / Ó 2009 WILEY-VCH Verlag GmbH & Co. KGaA / Plexus / /

Facility

National Institute of Standards and Technology / Phillips laboratory / /

IndustryTerm

carrier overflow / carrier diffusion model / metal / user software / carrier degeneracy / energy balance / monochrome applications / carrier transit time / apparent activation energy / electromagnetic energy / carrier confinement / superradiant devices / metal-semiconductor / carrier-launching ramp / ber-optic communications / metal-oxide semiconductor / luminous energy / carrier injection / energy-dependent capture cross section / energy transport fundamentals / electroluminescent devices / analytical device / dimensional electron gas / energy density / electron energy relaxation time / momentum operator / energy relaxation time / intrinsic carrier concentration / excess carrier lifetime / excess carrier / carrier leakage / minority carrier / energy temperature / carrier-density / activation energy / hot electron energy relaxation time / hot carrier relaxation / carrier velocity / carrier recombination / energy / /

NaturalFeature

GaN/InGaN channel / /

OperatingSystem

Fermi / /

Organization

Republican Party / National Institute of Standards and Technology / International Commission on Illumination / /

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Position

collector / CD-Rom player / lightly doped collector / base-collector / forward / player / /

ProgrammingLanguage

DC / /

Technology

semiconductor / radiation / laser / bipolar transistor / X-ray / lasers / dielectric / condensation / spectroscopy / simulation / SSL / recombination / /

SocialTag