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MODFET
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1	646 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 36. NO. 4, APRIL 1989 A Recessed-Gate In,.52A10.48As/n+-1%.53G%. 4 7 A ~ MIS-type FET Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:15:15 High electron mobility transistor Field-effect transistor MODFET Double heterostructure Transistor Threshold voltage MESFET Transconductance Semiconductor Electronics Technology Electromagnetism
2	IEEE ELECTRON DEVICE LETTERS, VOL. IO, NO. 8, AUGUST[removed]An Add to Reading List Source URL: www-mtl.mit.edu Language: English - Date: 2013-04-16 14:15:15 MISFET MOSFET Semiconductor devices High electron mobility transistor MODFET Field-effect transistor Diode Optical fiber Transistor Chemistry Technology Electromagnetism
3	June 2004 Jesús A. del Alamo Professor of Electrical Engineering Add to Reading List Source URL: www.distant-learning.net Language: English - Date: 2014-11-17 11:54:52 Inorganic compounds Semiconductor devices Semiconductors Indium gallium arsenide Indium phosphide MODFET High electron mobility transistor Gallium arsenide Gallium nitride Chemistry Optoelectronics Compound semiconductors
4	j831 Index 1 dB compression point[removed]f current noise[removed]f noise 531, 729, 731 Add to Reading List Source URL: www.wiley-vch.de Language: English - Date: 2009-04-21 02:17:14 Charge carriers Semiconductors Condensed matter physics Optoelectronics Semiconductor devices Hot carrier injection MODFET Transistor Noise Electromagnetism Physics Electronics