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MISFET / MOSFET / Semiconductor devices / High electron mobility transistor / MODFET / Field-effect transistor / Diode / Optical fiber / Transistor / Chemistry / Technology / Electromagnetism


IEEE ELECTRON DEVICE LETTERS, VOL. IO, NO. 8, AUGUST[removed]An
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Document Date: 2013-04-16 14:15:15


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City

Cambridge / /

Company

NTT LSI Laboratories / /

Country

Japan / /

Currency

USD / /

Facility

Massachusetts Institute of Technology / /

IndustryTerm

present device / Device processing / long devices / e-beam / reference device / particular device / selective chemical etchant high doping / heterostructure metal-insulator-semiconductor field-effect transistor / speed optical fiber communication systems / szAb48AS heterojunction metal-semiconductor field-effect transistors / /

Organization

Massachusetts Institute of Technology / Department of Electrical Engineering and Computer / /

Person

JESUS A. DEL ALAMO / TAKASHI MIZUTANI / /

ProvinceOrState

Massachusetts / /

Technology

semiconductor / optoelectronics / microwave / field-effect transistor / integrated circuits / optical fiber / /

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