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Inorganic compounds / Semiconductor devices / Semiconductors / Indium gallium arsenide / Indium phosphide / MODFET / High electron mobility transistor / Gallium arsenide / Gallium nitride / Chemistry / Optoelectronics / Compound semiconductors


June 2004 Jesús A. del Alamo Professor of Electrical Engineering
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Document Date: 2014-11-17 11:54:52


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