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Inorganic compounds / Semiconductor devices / Semiconductors / Indium gallium arsenide / Indium phosphide / MODFET / High electron mobility transistor / Gallium arsenide / Gallium nitride / Chemistry / Optoelectronics / Compound semiconductors
Date: 2014-11-17 11:54:52
Inorganic compounds
Semiconductor devices
Semiconductors
Indium gallium arsenide
Indium phosphide
MODFET
High electron mobility transistor
Gallium arsenide
Gallium nitride
Chemistry
Optoelectronics
Compound semiconductors

June 2004 Jesús A. del Alamo Professor of Electrical Engineering

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