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Ion implantation / Zinc oxide / Annealing / Center of Excellence in Nanotechnology at AIT / Chemistry / Semiconductor device fabrication / Materials science


phys. stat. sol. (c) 4, No. 10, 3646– DOIpsscIon species dependence of the implantation-induced defects in ZnO studied by a slow positron beam Z. Q. Chen∗1 , M. Maekawa2 , A. Kawasu
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Document Date: 2007-11-11 12:22:08

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City

Weinheim / Boca Raton / /

Company

WILEY-VCH Verlag GmbH & Co. KGaA / Thin Solid Films / /

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Facility

P. R. China Advanced Science Research Center / Wuhan University / /

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IndustryTerm

short wavelength light emitting devices / positron energy / chemical stabilization effect / energy range / chemical effects / large exciton binding energy / chemical effect / energy / /

Organization

National Natural Science Foundation of China / United Nations / P. R. China Advanced Science Research Center / Department of Physics / Japan Atomic Energy Agency / Wuhan University / Wuhan / /

Person

Ya I. Alivov / S. Dogan / V / /

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Position

Corresponding author / /

ProvinceOrState

Florida / /

Technology

semiconductor / radiation / laser / simulation / recombination / /

URL

www.pss-c.com / /

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