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Zinc oxide / Atomic layer deposition / Oxide thin film transistor / Sputter deposition / Thin-film transistor / Center of Excellence in Nanotechnology at AIT / Chemistry / Thin film deposition / Ultraviolet radiation


P-22: Top-Gate Thin Film Transistor with ZnO:N Channel Fabricated by Room Temperature RF Magnetron Sputtering
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Document Date: 2014-10-10 03:11:50

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File Size: 2,17 MB

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Company

Agilent / Matsuda / /

Currency

USD / /

Facility

The Hong Kong University of Science / /

IndustryTerm

metal oxide candidates / energy region / low processing temperature / photo energy / energy / /

Movie

Glass / Wavelength / Intensity / /

NaturalFeature

ZnO /

Organization

Hong Kong University of Science and Technology / Society for Information Display / Hoi-Sing Kwok State Key Lab on Advanced Displays and Optoelectronics / /

Person

Wei Zhou / Meng Zhang / /

PublishedMedium

Applied Physics Letters / Advanced Materials / Japanese Journal of Applied Physics / Nature Materials / /

Technology

semiconductor / crystallization / Optoelectronics / spectroscopy / X-ray / dielectric / /

SocialTag