Date: 2006-06-15 18:36:35

Electromagnetism

Semiconductor devices

Field-effect transistor

Electronic engineering

Power electronics

Transistors

Threshold voltage

Channel length modulation

Electrical engineering

Technology

MOSFET

SOCAMS 2004, Claremont, CA. Modeling Quantum Effects on Current/Voltage Characteristics of a MOSFET Transistor Henok Abebe, USC Information Sciences Institute, MOSIS Service, Ellis Cumberbatch, School of Mathematical Sci

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