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Electromagnetism / Semiconductor devices / Field-effect transistor / Electronic engineering / Power electronics / Transistors / Threshold voltage / Channel length modulation / Electrical engineering / Technology / MOSFET


SOCAMS 2004, Claremont, CA. Modeling Quantum Effects on Current/Voltage Characteristics of a MOSFET Transistor Henok Abebe, USC Information Sciences Institute, MOSIS Service, Ellis Cumberbatch, School of Mathematical Sci
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Document Date: 2006-06-15 18:36:35

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File Size: 93,61 KB

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City

San Francisco / Claremont / /

Country

United States / /

Facility

USC Information Sciences Institute / /

IndustryTerm

Analytic solutions / metal-oxide-silicon field-effect transistor / classical solution / /

Organization

School of Mathematical Sciences / USC Information Sciences Institute / MOSIS Service / /

Person

Ellis Cumberbatch / /

Technology

dielectric / field-effect transistor / /

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