IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL[removed]Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer

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Date: 2014-10-09 23:23:02 Inorganic compounds Semiconductor device fabrication Ultraviolet radiation Gallium nitride Sputter deposition Organic field-effect transistor Sputtering Thin film Amorphous silicon Chemistry Thin films Thin film deposition		IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL[removed]Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer Add to Reading List Source URL: www.pskl.ust.hk Download Document from Source Website File Size: 445,99 KB Share Document on Facebook

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