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Inorganic compounds / Semiconductor device fabrication / Ultraviolet radiation / Gallium nitride / Sputter deposition / Organic field-effect transistor / Sputtering / Thin film / Amorphous silicon / Chemistry / Thin films / Thin film deposition


IEEE ELECTRON DEVICE LETTERS, VOL. 34, NO. 4, APRIL[removed]Bottom-Gate Thin-Film Transistors Based on GaN Active Channel Layer
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Document Date: 2014-10-09 23:23:02

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File Size: 445,99 KB

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Company

Thin Solid Films / Furukawa / Kubota / COX / Agilent / /

Currency

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Facility

Hong Kong University of Science / /

IndustryTerm

metal alloy / large-scale active-matrix organic light-emitting diode applications / low processing temperature / organic chemical vapor deposition / metal layers / /

Organization

Hong Kong University of Science and Technology / Center for Display Research / Hong Kong Government Research Grants Council / Department of Electronic and Computer Engineering / /

Person

Wei Zhou / Meng Zhang / Hoi Sing Kwok / Layer Rongsheng Chen / W. S. Wong / /

Position

Editor / /

Technology

semiconductor / radiation / laser / semiconductors / field-effect transistor / X-ray / Digital Object Identifier / photolithography / CVD / dielectric / chemical vapor deposition / /

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http /

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