Principal Research Results Establishment of the Base Technology of Large-Capacitance SiC Semiconductor −Development of High Growth Rate and Large-Diameter Epitaxy Technique− Background

First Page		Document Content
Date: 2009-03-04 02:31:11 Thin film deposition Materials science Epitaxy Silicon carbide Chemical vapor deposition Doping Thin film N-type semiconductor Semiconductor device Chemistry Semiconductor device fabrication Manufacturing		Principal Research Results Establishment of the Base Technology of Large-Capacitance SiC Semiconductor −Development of High Growth Rate and Large-Diameter Epitaxy Technique− Background Add to Reading List Source URL: criepi.denken.or.jp Download Document from Source Website File Size: 225,68 KB Share Document on Facebook

	Low band gap (X-DADAD)n type copolymers for stable and efficient bulk heterojunction organic solar cells Alexander V. Akkuratov, Iliya E. Kuznetsov, Irina V. Klimovich, Diana K. Susarova, Fedor A. Prudnov, Olga A. Mukhac DocID: 1qRrF - View Document
	Product Spotlight SOL9350 Series New P+ Contact Paste for N-type Cells N-type cell designs have demonstrated high efficiencies for DocID: 1pU6D - View Document
	N-type semiconductor N-type semiconductor N-type semiconductors are a type of extrinsic semiconductor where the dopant atoms are capable of providing extra conduction electrons to the host material (e.g. phosphorus in s DocID: 1djkb - View Document
	Kinematic Analysis of a Space Mechanism—Rendezvous Simulator DocID: 19nLL - View Document
	Silicon Wafers 2 inch p-type test wafers Specifications 2 inch n-type wafers DocID: 19nmy - View Document