![Thin film deposition / Materials science / Epitaxy / Silicon carbide / Chemical vapor deposition / Doping / Thin film / N-type semiconductor / Semiconductor device / Chemistry / Semiconductor device fabrication / Manufacturing Thin film deposition / Materials science / Epitaxy / Silicon carbide / Chemical vapor deposition / Doping / Thin film / N-type semiconductor / Semiconductor device / Chemistry / Semiconductor device fabrication / Manufacturing](https://www.pdfsearch.io/img/07dcf77c7e47723e91dd456232367994.jpg) Date: 2009-03-04 02:31:11Thin film deposition Materials science Epitaxy Silicon carbide Chemical vapor deposition Doping Thin film N-type semiconductor Semiconductor device Chemistry Semiconductor device fabrication Manufacturing | | Principal Research Results Establishment of the Base Technology of Large-Capacitance SiC Semiconductor −Development of High Growth Rate and Large-Diameter Epitaxy Technique− BackgroundAdd to Reading ListSource URL: criepi.denken.or.jpDownload Document from Source Website File Size: 225,68 KBShare Document on Facebook
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