Related Wide Bandgap Semiconductors / Large-Capacitance SiC Semiconductor / /
Facility
CVD reactor / /
IndustryTerm
gas inlet / chemical process / power electronics devices / power devices / semiconductor devices / source gas concentration / long carrier lifetime / /
Organization
Japan Society of Applied Physics / /
Person
Masahiko Ito / /
Position
Researcher / /
Product
SiC / /
Technology
semiconductor / radiation / Base Technology / Technology of Large-Capacitance SiC Semiconductor / CVD / semiconductor devices / Chemical Vapor Deposition / /
Principal Research Results Establishment of the Base Technology of Large-Capacitance SiC Semiconductor −Development of High Growth Rate and Large-Diameter Epitaxy Technique− Background