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Electromagnetism / Semiconductor device fabrication / MOSFET / Threshold voltage / Transistors / Doping / Field-effect transistor / Random dopant fluctuation / Gate oxide / Electrical engineering / Semiconductor devices / Electronic engineering


Quantum corrections to the 'atomistic' MOSFET simulation - Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow[removed]7th International Workshop
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Document Date: 2011-08-15 10:02:41


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