Quantum corrections to the - Dopant - Document - PDFSEARCH.IO

First Page		Document Content
Date: 2011-08-15 10:02:41 Electromagnetism Semiconductor device fabrication MOSFET Threshold voltage Transistors Doping Field-effect transistor Random dopant fluctuation Gate oxide Electrical engineering Semiconductor devices Electronic engineering		Quantum corrections to the 'atomistic' MOSFET simulation - Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow[removed]7th International Workshop Add to Reading List Source URL: eprints.gla.ac.uk Download Document from Source Website File Size: 395,50 KB Share Document on Facebook

	High-Aspect Ratio Deep Sub-Micron α-Si Gate Etch Process Control H.-M. Park, T. L. Brock, D. Grimard, J. W. Grizzle and F. L. Terry, Jr University of Michigan 195th Spring Meeting of ECS DocID: 1p1ER - View Document
	Atomic layer etching of HfO2 film for gate oxide in MOSFET devices Nano Lee1, Nano Choi2, and Nano Kim1, 2, 3* 1 SKKU Advanced Institude of Nano Technology(SAINT), Sungkyunkwan University, Suwon, Kyunggi-do, Sou DocID: 1n88n - View Document
	PDF Document DocID: 18prs - View Document
	Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir DocID: 1824D - View Document
	Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Interfacial reactions for Ru metal-electrode/HfSiON gate stack structures studied DocID: 17ZrS - View Document