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Electromagnetism / Semiconductor device fabrication / MOSFET / Threshold voltage / Transistors / Doping / Field-effect transistor / Random dopant fluctuation / Gate oxide / Electrical engineering / Semiconductor devices / Electronic engineering


Quantum corrections to the 'atomistic' MOSFET simulation - Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow[removed]7th International Workshop
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Document Date: 2011-08-15 10:02:41

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City

Glasgow / /

Company

Computational Electronics / /

Country

United Kingdom / /

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Facility

Electrical Engineering University of Glasgow / /

IndustryTerm

carrier concentration / 3D solution / individual devices / decanano devices / /

MusicGroup

Poisson / /

Organization

Glasgow ePrints Service / NASA Ames Research Center / MOSFET Simulation A. Asenov Device Modelling Group Department of Electronics / Electronics and Electrical Engineering University of Glasgow / /

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Position

author / /

Technology

simulation / integrated circuits / /

URL

http /

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