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Quantum corrections to the 'atomistic' MOSFET simulation - Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow[removed]7th International Workshop
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Document Date: 2011-08-15 10:02:41
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File Size: 395,50 KB
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City
Glasgow /
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Company
Computational Electronics /
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Country
United Kingdom /
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Facility
Electrical Engineering University of Glasgow /
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IndustryTerm
carrier concentration /
3D solution /
individual devices /
decanano devices /
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MusicGroup
Poisson /
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Organization
Glasgow ePrints Service /
NASA Ames Research Center /
MOSFET Simulation A. Asenov Device Modelling Group Department of Electronics /
Electronics and Electrical Engineering University of Glasgow /
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Position
author /
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Technology
simulation /
integrated circuits /
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URL
http /
SocialTag
Electromagnetism
Semiconductor device fabrication
MOSFET
Threshold voltage
Transistors
Doping
Field-effect transistor
Random dopant fluctuation
Gate oxide
Electrical engineering