4H-SiC MOSFETs with High Channel Mobility by P-Doped Gate Oxide Assistant Prof. Hiroshi YANO (NAIST) 1. 4H-SiC MOSFET DC Transmission - Electrical mobility - Document - PDFSEARCH.IO

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	4H-SiC MOSFETs with High Channel Mobility by P-Doped Gate Oxide Assistant Prof. Hiroshi YANO (NAIST) 1. 4H-SiC MOSFET DC Transmission Add to Reading List Document Date: 2012-11-19 02:09:11 Open Document File Size: 238,72 KB Share Result on Facebook Company UPS / / Country United States / / / IndustryTerm ultra-low power loss devices / / NaturalFeature Low channel / Typical channel / / / Position P-Doped Gate Oxide Assistant / / URL http / SocialTag Power electronics Semiconductor devices MOSFET Field-effect transistor Gate oxide Threshold voltage Silicon carbide Insulated gate bipolar transistor Polysilicon depletion effect Electrical engineering

4H-SiC MOSFETs with High Channel Mobility by P-Doped Gate Oxide Assistant Prof. Hiroshi YANO (NAIST) 1. 4H-SiC MOSFET DC TransmissionAdd to Reading List