Polysilicon depletion effect

#	Item
1	4H-SiC MOSFETs with High Channel Mobility by P-Doped Gate Oxide Assistant Prof. Hiroshi YANO (NAIST) 1. 4H-SiC MOSFET DC Transmission Add to Reading List Source URL: www.jst.go.jp Language: English - Date: 2012-11-19 02:09:11 Power electronics Semiconductor devices MOSFET Field-effect transistor Gate oxide Threshold voltage Silicon carbide Insulated gate bipolar transistor Polysilicon depletion effect Electrical engineering Electronic engineering Technology
2	A Simplified Current-Voltage (I-V) Characteristics Model with Quantum Mechanical Effects for n-channel MOSFET Henok Abebe and Vance Tyree MOSIS service, USC Information Sciences Institute 4676 Admiralty Way, Marina del R Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:14 Semiconductor devices Threshold voltage Transistors Electronic design MOSFET Polysilicon depletion effect Field-effect transistor Capacitance CMOS Electromagnetism Electrical engineering Electronic engineering
3	Microsoft Word - SCI05-II.doc Add to Reading List Source URL: www.cgu.edu Language: English - Date: 2006-06-15 18:37:14 Semiconductor devices Transistors Polysilicon depletion effect MOSFET Threshold voltage Electronic design Depletion region Field-effect transistor Depletion and enhancement modes Electronic engineering Electrical engineering Electromagnetism