High mobility p-channel HFETs using strained Sb-based materials J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook Antimonide-based p-channel HFETs with a 0.25 mm gate le

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Date: 2013-11-22 13:51:51 Semiconductor devices MOSFET Field-effect transistor Transistor High electron mobility transistor Threshold voltage Transconductance Quantum well Electronics Electrical engineering Electromagnetism		High mobility p-channel HFETs using strained Sb-based materials J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook Antimonide-based p-channel HFETs with a 0.25 mm gate le Add to Reading List Source URL: www.nrl.navy.mil Download Document from Source Website File Size: 121,35 KB Share Document on Facebook

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