High mobility p-channel HFETs using strained Sb-based materials J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook Antimonide-based p-channel HFETs with a 0.25 mm gate le - Electrical mobility - Document - PDFSEARCH.IO

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	High mobility p-channel HFETs using strained Sb-based materials J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook Antimonide-based p-channel HFETs with a 0.25 mm gate le Add to Reading List Document Date: 2013-11-22 13:51:51 Open Document File Size: 121,35 KB Share Result on Facebook City The Sb / Sb / / Company Shanabrook B.V. / LG / B.R. Bennett N.A. / Naval Research Laboratory / / Country United States / / / IndustryTerm energy levels / metal / metal pattern / sheet carrier concentration / e-beam / wet chemical etching / low-power logic transistor applications / gate metal definition / energy-band diagram / logic applications / / Organization Institution of Engineering and Technology / office of Naval Research / / Technology microwave / lithography / / SocialTag Semiconductor devices MOSFET Field-effect transistor Transistor High electron mobility transistor Threshold voltage Transconductance Quantum well Electronics Electrical engineering

High mobility p-channel HFETs using strained Sb-based materials J.B. Boos, B.R. Bennett, N.A. Papanicolaou, M.G. Ancona, J.G. Champlain, R. Bass and B.V. Shanabrook Antimonide-based p-channel HFETs with a 0.25 mm gate leAdd to Reading List