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Electron mobility / X-height / Velocity overshoot / Condensed matter physics / Materials science / Physics / Typography / MOSFET


Modeling of Saturation-Region Characteristics of Nanoscale Double-Gate MOSFETs J. G. Fossum and S. Chouksey Department of Electrical and Computer Engineering University of Florida
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Document Date: 2007-07-11 13:39:25

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File Size: 175,32 KB

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Computer Engineering University of Florida Gainesville / /

IndustryTerm

average energy / carrier temperature / high carrier mobilities / carrier velocity / analytical solution / thick-tSi device / substantive carrier velocity / nominal device / /

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DOS / /

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Computer Engineering University of Florida Gainesville / Purdue Univ. / Nanoscale Double-Gate MOSFETs J. G. Fossum and S. Chouksey Department / /

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FL / /

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Prince Edward Island / Florida / /

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