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Electron mobility
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1	Veena Misra Professor of Electrical and Computer Engineering North Carolina State University Optimizing Performance and Reliability of GaN MOSFET Devices Owing to a high critical electric field and high electron mobility Add to Reading List Source URL: www.apec-conf.org Language: English - Date: 2016-08-22 14:30:22
2	Letter pubs.acs.org/JPCL Cite This: J. Phys. Chem. Lett. 2017, 8, High Hole-Mobility Molecular Layer Made from Strong Electron Add to Reading List Source URL: www.uvsor.ims.ac.jp Language: English - Date: 2017-11-12 22:01:33
3	InAs-core Composite Channel Metal Oxide Semiconductor-High Electron Mobility Transistors : Fabrication and Characterization Wei-Hsiang Yu (尤韋翔) Add to Reading List Source URL: diamondprj.nctu.edu.tw - Date: 2013-09-25 03:31:52
4	VOLUME 93, N UMBER 8 PHYSICA L R EVIEW LET T ERS week ending 20 AUGUST 2004 Add to Reading List Source URL: rogers.matse.illinois.edu Language: English - Date: 2004-09-14 20:39:00 Electronics Electromagnetism Organic semiconductors Chemistry Molecular electronics Semiconductors Rubrene Organic field-effect transistor Transistor Threshold voltage Polaron Electron mobility
5	PDF Document Add to Reading List Source URL: f1duj.free.fr Language: English - Date: 2005-04-28 17:39:27 Chemistry Gallium arsenide Optoelectronics Field-effect transistor Email Fet Electrical components ANADIGICS High-electron-mobility transistor
6	PHYSICAL REVIEW B 93, Demonstration of gate control of spin splitting in a high-mobility InAs/AlSb two-dimensional electron gas B. Shojaei,1 P. J. J. O’Malley,2 J. Shabani,3 P. Roushan,2 B. D. Schultz,4 Add to Reading List Source URL: web.physics.ucsb.edu Language: English - Date: 2016-03-02 17:23:43 Electromagnetism Physics Condensed matter physics Magnetism Spintronics Quantum magnetism Rashba effect Semiconductors Two-dimensional electron gas Spinorbit interaction Shubnikovde Haas effect Superlattice
7	TDPS251E0D2 Application Note: TDPS251E0D2 LLC DC/DC Converter Evaluation Board 1. Introduction The Evaluation Board for an LLC circuit using GaN HEMTs is described in this paper. In this Add to Reading List Source URL: www.transphormusa.com Language: English - Date: 2016-08-11 14:26:47 Electromagnetism Electric power conversion Electrical engineering Electronics High-electron-mobility transistor DC-to-DC converter Voltage divider Active rectification Transistor
8	Paper Title (use style: paper title) Add to Reading List Source URL: www.merl.com Language: English - Date: 2016-07-29 10:26:03 Chemistry Matter Nitrides Transistors High-electron-mobility transistor Terahertz technology Monolithic microwave integrated circuit Gallium nitride Two-dimensional electron gas Indium aluminium nitride Synthetic diamond Indium gallium nitride
9	Industry-Academia Workshop on GaN Technology August 9, 10: 00 – 16:00, Technion Zisapel Nanoelectonics Building, seminar room 4th floor. Program 10:00 Opening Remarks, Dan Ritter, Technion, David Rosenfeld, IMOD Add to Reading List Source URL: webee.technion.ac.il Language: English - Date: 2016-07-25 07:39:37 Chemistry Science and technology in Israel High-electron-mobility transistor Terahertz technology Technion Israel Institute of Technology Aluminium gallium nitride Gan Electronics Matter
10	Microsoft Word - Electronic Properies of Materials.doc Add to Reading List Source URL: www.amiestudycircle.com Language: English - Date: 2015-11-17 02:26:51 Physics Chemistry Condensed matter physics Materials science Physical quantities Charge carriers Electrical resistivity and conductivity Electronics Electron mobility Electron hole Electron Silicon

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