Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices R. Magno* 1, B. R. Bennett1, K. Ikossi1, M. G. Ancona1, E. R. Glaser1, N. Papanicolaou1, J. B. Boos1, B. V. Shanabrook1, and A. Gutierrez2 1 Na

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Date: 2013-11-22 14:33:37 Ceramic materials Heterojunction bipolar transistor Heterojunction Bipolar junction transistor Lattice constant Silicon carbide Band gap Gallium phosphide Semiconductor Chemistry Electronics Electromagnetism		Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices R. Magno* 1, B. R. Bennett1, K. Ikossi1, M. G. Ancona1, E. R. Glaser1, N. Papanicolaou1, J. B. Boos1, B. V. Shanabrook1, and A. Gutierrez2 1 Na Add to Reading List Source URL: www.nrl.navy.mil Download Document from Source Website File Size: 171,96 KB Share Document on Facebook

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