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Ceramic materials / Heterojunction bipolar transistor / Heterojunction / Bipolar junction transistor / Lattice constant / Silicon carbide / Band gap / Gallium phosphide / Semiconductor / Chemistry / Electronics / Electromagnetism


Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices R. Magno* 1, B. R. Bennett1, K. Ikossi1, M. G. Ancona1, E. R. Glaser1, N. Papanicolaou1, J. B. Boos1, B. V. Shanabrook1, and A. Gutierrez2 1 Na
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Document Date: 2013-11-22 14:33:37


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City

Washington / D.C. / Antimony / /

Company

A. Gutierrez2 1 Naval Research Laboratory / R. Magno A. S. / TRW / /

Country

United States / /

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IndustryTerm

bandgap energy / speed low-power electronic devices / wet chemical etching / device applications / high-energy side / low energy side / energy / /

Organization

Defense Advanced Research Projects Agency / office of Naval Research / Univ. of California Santa Barbara / /

Person

Cedric Monier / Donald Sawdai / Mike Wojtowicz / /

Position

collector / Base In0.27Ga0.73Sb Collector / /

ProgrammingLanguage

DC / /

Technology

semiconductor / lithography / semiconductors / X-ray / recombination / /

SocialTag