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Atomic layer deposition / Semiconductor / Hafnium(IV) silicate / Chemistry / Electromagnetism / Physics / Electronic engineering / High-k dielectric / Transistors


Photon Factory Activity Report 2009 #27 Part BSurface and Interface 2C/2008S2003 Relationship between band alignment and chemical states upon annealing in
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Document Date: 2010-12-27 22:22:07

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City

Tokyo / Si / /

Company

RBS / /

Country

Japan / /

Currency

pence / /

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Facility

The University of Tokyo / /

IndustryTerm

metal oxide semiconductor / chemical states / higher binding energy corresponding / /

MusicGroup

Surface / Interface / Valence / Chemistry / /

Organization

University of Tokyo / Tokyo / Japan Science and Technology Agency / Synchrotron Radiation Research Organization / Department of Applied Chemistry / /

Technology

semiconductor / Radiation / spectroscopy / x-ray / dielectric / /

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