Back to Results
First PageMeta Content
Materials science / Nucleation / Grain growth / Epitaxy / Surface diffusion / Polycrystalline silicon / Chemical vapor deposition / Pulsed laser deposition / Chemistry / Semiconductor device fabrication / Thin film deposition


Thin Solid Films[removed]–70 Quantitative modelling of nucleation kinetics in experiments for poly-Si growth on SiO2 by hot wire chemical vapor deposition Maribeth S. Mason*, Jason K. Holt, Harry A. Atwater Thoma
Add to Reading List

Document Date: 2007-07-14 18:58:39


Open Document

File Size: 524,03 KB

Share Result on Facebook

City

Pasadena / /

Company

Lawrence Livermore National Laboratory / Thin Solid Films / Elsevier B.V. / National Renewable Energy Laboratory / /

Currency

Rs / /

/

Facility

Harry A. Atwater Thomas J. Watson Laboratory of Applied Physics / California Institute of Technology / National Renewable Energy Laboratory / stable Si / /

IndustryTerm

wire chemical vapor deposition / chemical vapor deposition / hot wire chemical vapor deposition / estimated activation energy / activation energy / gas phase / identical gas ambient / thin film photovoltaics applications / /

Organization

California Institute of Technology / Harry A. Atwater Thomas J. Watson Laboratory of Applied Physics / /

Person

Jason K. Holt / Maribeth S. Mason / /

/

Position

*Corresponding author / /

ProvinceOrState

California / /

Technology

simulation / recombination / chemical vapor deposition / /

SocialTag