chemical bonding states / metal-oxidesemiconductor field effect transistors / chemical reaction / ambient gas / gas ambient / ambient gas species / /
Organization
High-Energy Accelerator Research Organization / University of Tokyo / Tokyo / Semiconductor Technology Academic Research Center / Technology / Japan Science and Technology Agency / Univ-of Tokyo Synchrotron Radiation Research Organization / Department of Applied Chemistry / /
Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir