Equivalent oxide thickness

Results: 5



#Item
1Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir

Photon Factory Activity Report 2008 #26 Part BSurface and Interface 2C/2005S2-002 Control of oxidation and reduction in HfSiON/Si through N2 exposure Hiroyuki KAMADA*1, Tatsuhiko TANIMURA1, Satoshi TOYODA1-3, Hir

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Source URL: pfwww.kek.jp

Language: English - Date: 2010-01-05 10:36:03
2Microsoft Wordrevised

Microsoft Wordrevised

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Source URL: rs.ieee.org

Language: English - Date: 2011-06-08 19:42:34
3AMDp2 - 5  High-Performance and Low-Temperature-Compatible Solid Phase Crystallized Polycrystalline Silicon Thin Film Transistors Using Thermal Oxide Buffered Aluminum Oxide as Gate Dielectric

AMDp2 - 5 High-Performance and Low-Temperature-Compatible Solid Phase Crystallized Polycrystalline Silicon Thin Film Transistors Using Thermal Oxide Buffered Aluminum Oxide as Gate Dielectric

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Source URL: www.pskl.ust.hk

Language: English - Date: 2014-10-10 03:11:48
4High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

High-performance polycrystalline silicon thin-film transistors integrating sputtered aluminum-oxide gate dielectric with bridged-grain active channel

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Source URL: www.pskl.ust.hk

Language: English - Date: 2013-09-30 03:14:00
5Eur. Phys. J. Appl. Phys. 28, 265–[removed]DOI: [removed]epjap:[removed]

Eur. Phys. J. Appl. Phys. 28, 265–[removed]DOI: [removed]epjap:[removed]

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Source URL: www.stanford.edu

Language: English - Date: 2005-04-28 19:13:20