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Oxides / Thin film deposition / Ceramic materials / Semiconductor device fabrication / Digital electronics / Atomic layer deposition / Hafnium(IV) oxide / MOSFET / Equivalent oxide thickness / Chemistry / Electromagnetism / Matter


Eur. Phys. J. Appl. Phys. 28, 265–[removed]DOI: [removed]epjap:[removed]
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Document Date: 2005-04-28 19:13:20

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File Size: 1,97 MB

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LSI / II oxides SrO / Ge / Copel / Cox / Intel / Zr Hf / /

Currency

pence / /

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Facility

Cambridge University / /

IndustryTerm

mid gap energy / carrier mobilities / gate metal / volatile by-product / pure metal oxides / metal gate / chemical similarity / electron gas / higher carrier density / gas phase reactions / free energy / gas annealing / carrier injection / normal metal / metal organics / metal gates / chemical vapour deposition / low standby power devices / metal chlorides / important electronic device / circuit fabrication technology / carrier mobility / low carrier density / microelectronics technology / metal / gate oxide applications / band offsets determining carrier injection / manufacturing high / conduction band energy / lowest cost solution / reasonable metal / deposited metal / electronics industry / transition metal oxides / different metal / metal oxide semiconductor / electronics / effective chemical reactions / volatile metal compound / chemical oxide / /

NaturalFeature

Si channel / /

OperatingSystem

DOS / /

Organization

Cambridge University / ASIC / /

Person

Ion Scattering / /

Position

conductor / CaO / /

Product

Al2 O3 / /

Technology

semiconductor / circuit fabrication technology / x-ray / mobile phones / lithography / random access / fuel cells / microelectronics technology / ASIC / dielectric / spectroscopy / CVD / integrated circuit / /

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