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Date: 2016-07-29 10:26:03 Chemistry Matter Nitrides Transistors High-electron-mobility transistor Terahertz technology Monolithic microwave integrated circuit Gallium nitride Two-dimensional electron gas Indium aluminium nitride Synthetic diamond Indium gallium nitride		Paper Title (use style: paper title) Add to Reading List Source URL: www.merl.com Download Document from Source Website File Size: 668,85 KB Share Document on Facebook

	Paper Title (use style: paper title) DocID: 1qzVz - View Document
	Improvement of Critical Temperature of Superconducting NbTiN and NbN Thin Films Using the AlN Buﬀer Layer Tatsuya Shiino, Shoichi Shiba, and Nami Sakai Department of Physics, The University of Tokyo, Hongo, Bunkyo-ku, DocID: 17LpJ - View Document
	doi:S0961 DocID: 11PBJ - View Document
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